Behaviour of implanted arsenic during rapid thermal annealing of Ti on Si
Identifieur interne : 000321 ( France/Analysis ); précédent : 000320; suivant : 000322Behaviour of implanted arsenic during rapid thermal annealing of Ti on Si
Auteurs : J. P. Ponpon [France] ; A. Saulnier [France] ; R. Stuck [France]Source :
- Applied Physics A [ 0947-8396 ] ; 1987-11-01.
Abstract
Abstract: The reaction during rapid thermal annealing of the Ti-Si couple with arsenic implanted either into titanium or into silicon has been investigated from the point of view of suicide formation kinetics and impurity redistribution. In contrast with similar experiments on other refractory metals, tungsten for example, the reaction is not blocked by the presence of arsenic but a temperature and dose dependent impurity effect leading to a lowering of the growth rate of the disilicide phase is observed. This has been attributed to arsenic segregation in the grain boundaries of the growing suicide which reduces the transport of silicon via easy diffusion paths towards the unreacted metal or a metal rich suicide phase. Arsenic, when present in the metal, has been found to produce the same effects as oxygen at the early beginning of the annealing. However, after the reaction has started the respective behaviour and influence of arsenic and oxygen become completely different.
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DOI: 10.1007/BF00616694
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P." last="Ponpon">J. P. Ponpon</name><affiliation wicri:level="3"><country xml:lang="fr">France</country><wicri:regionArea>Groupe PHASE, Centre de Recherches Nucléaires, F-67037, Strasbourg</wicri:regionArea><placeName><region type="region" nuts="2">Grand Est</region><region type="old region" nuts="2">Alsace (région administrative)</region><settlement type="city">Strasbourg</settlement></placeName></affiliation></author><author><name sortKey="Saulnier, A" sort="Saulnier, A" uniqKey="Saulnier A" first="A." last="Saulnier">A. 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A</title><idno type="ISSN">0947-8396</idno><idno type="eISSN">1432-0630</idno><imprint><publisher>Springer-Verlag</publisher><pubPlace>Berlin/Heidelberg</pubPlace><date type="published" when="1987-11-01">1987-11-01</date><biblScope unit="volume">44</biblScope><biblScope unit="issue">3</biblScope><biblScope unit="page" from="227">227</biblScope><biblScope unit="page" to="232">232</biblScope></imprint><idno type="ISSN">0947-8396</idno></series><idno type="istex">F7FDD327DFCAD271DBBF0762D95E4D4BD71CB4DC</idno><idno type="DOI">10.1007/BF00616694</idno><idno type="ArticleID">BF00616694</idno><idno type="ArticleID">Art5</idno></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0947-8396</idno></seriesStmt></fileDesc><profileDesc><textClass></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Abstract: The reaction during rapid thermal annealing of the Ti-Si couple with arsenic implanted either into titanium or into silicon has been investigated from the point of view of suicide formation kinetics and impurity redistribution. In contrast with similar experiments on other refractory metals, tungsten for example, the reaction is not blocked by the presence of arsenic but a temperature and dose dependent impurity effect leading to a lowering of the growth rate of the disilicide phase is observed. This has been attributed to arsenic segregation in the grain boundaries of the growing suicide which reduces the transport of silicon via easy diffusion paths towards the unreacted metal or a metal rich suicide phase. Arsenic, when present in the metal, has been found to produce the same effects as oxygen at the early beginning of the annealing. However, after the reaction has started the respective behaviour and influence of arsenic and oxygen become completely different.</div></front></TEI><affiliations><list><country><li>France</li></country><region><li>Alsace (région administrative)</li><li>Grand Est</li></region><settlement><li>Strasbourg</li></settlement></list><tree><country name="France"><region name="Grand Est"><name sortKey="Ponpon, J P" sort="Ponpon, J P" uniqKey="Ponpon J" first="J. P." last="Ponpon">J. P. Ponpon</name></region><name sortKey="Saulnier, A" sort="Saulnier, A" uniqKey="Saulnier A" first="A." last="Saulnier">A. Saulnier</name><name sortKey="Stuck, R" sort="Stuck, R" uniqKey="Stuck R" first="R." last="Stuck">R. Stuck</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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